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| BUZ 171 SIPMOS (R) Power Transistor * P channel * Enhancement mode * Avalanche rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 171 VDS -50 V ID -8 A RDS(on) 0.3 Package TO-220 AB Ordering Code C67078-S1450-A2 Maximum Ratings Parameter Continuous drain current Symbol Values -8 Unit A ID IDpuls -32 TC = 30 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 70 mJ ID = -8 A, VDD = -25 V, RGS = 25 L = 1.1 mH, Tj = 25 C Gate source voltage Power dissipation VGS Ptot 20 40 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 171 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -3 -0.1 -10 -10 0.25 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS -1 -100 A VDS = -50 V, VGS = 0 V, Tj = 25 C VDS = -50 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS -100 nA 0.3 VGS = -20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = -10 V, ID = -5 A Semiconductor Group 2 07/96 BUZ 171 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1.5 2.3 750 270 120 - S pF 1000 400 180 ns 20 30 VDS 2 * ID * RDS(on)max, ID = -5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Rise time tr 110 170 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Turn-off delay time td(off) 70 90 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Fall time tf 100 140 VDD = -30 V, VGS = -10 V, ID = -2.9 A RGS = 50 Semiconductor Group 3 07/96 BUZ 171 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A -1.25 90 0.23 -8 -32 V -1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = -16 A Reverse recovery time VR = -30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 171 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS -10 V -9 A 45 W Ptot 35 30 25 20 15 10 5 0 0 ID -7 -6 -5 -4 -3 -2 -1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C -10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A t = 90.0s p 100 s K/W ID -10 1 ) on S( D R /ID = ZthJC 1 ms 10 0 VD S 10 -1 10 ms D = 0.50 0.20 -10 0 0.10 DC 10 -2 0.05 0.02 single pulse 0.01 -10 -1 0 -10 -10 1 V -10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 171 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -18 A VGS [V] Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.9 a b c d e f g h i Ptot = 40W l k a b c -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 ID -14 -12 RDS (on) 0.7 0.6 0.5 0.4 0.3 j d j e f g -10 -8 -6 -4 -2 0 0 i h hi g j k -10.0 f l -20.0 e d c a b 0.2 0.1 0.0 0 -2 -4 -6 -8 -10 -12 A -16 VGS [V] = a b c d e f -4.5 -4.0 -5.5 -6.0 -6.5 -7.0 -7.5 -5.0 g h i j -8.0 -9.0 -10.0 -20.0 -2 -4 -6 -8 -10 -12 -14 -16 V -19 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max -15 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 4.0 S ID -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 gfs 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0 -2 -4 -6 -8 -10 -12 VGS A ID -15 Semiconductor Group 6 07/96 BUZ 171 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -5 A, VGS = -10 V 0.70 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA -4.6 V -4.0 0.60 98% RDS (on)0.55 0.50 0.45 0.40 VGS(th) -3.6 -3.2 -2.8 typ 98% 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 2% typ -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 2 pF C 10 3 A IF -10 1 Ciss Coss 10 2 Crss -10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -10 -1 0.0 -5 -10 -15 -20 -25 -30 V VDS -40 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 07/96 BUZ 171 Avalanche energy EAS = (Tj ) parameter: ID = -8 A, VDD = -25 V RGS = 25 , L = 1.1 mH 75 mJ Drain-source breakdown voltage V(BR)DSS = (Tj) -60 V EAS 60 55 50 45 40 35 30 25 20 15 10 5 0 20 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 40 60 80 100 120 C 160 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 07/96 BUZ 171 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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